? 2002 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 20v, v gs = 0v 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = i t 36n100 0.24 ? note 2 34n100 0.28 ? hiperfet tm power mosfet single mosfet die symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c, r gs = 1m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 36n100 33 a 34n100 30 a i dm t c = 25 c; note 1 36n100 144 a 34n100 136 a i ar t c = 25 c 36 a e ar t c = 25 c 64 mj e as t c = 25 c 4 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 580 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 19 g v dss i d25 r ds(on) ixfe 36n100 1000 v 33 a 0.24 ? ? ? ? ? ixfe 34n100 1000 v 30 a 0.28 ? ? ? ? ? t rr 250 ns preliminary data sheet features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? low cost ? easy to mount ? space savings ? high power density g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source 98897 (1/02) isoplus 227 tm (ixfe) s g s d
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , note 2 18 28 s c iss 15000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1400 pf c rss 340 pf t d(on) 81 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 82 ns t d(off) r g = 1 ? (external), 150 n s t f 40 ns q g(on) 455 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 120 nc q gd 185 nc r thjc 0.22 k/w r thck 0.07 k/w source-drain diode (t j = 25 c, unless otherwise specified) characteristic values symbol test conditions min. typ. max. i s v gs = 0 36n100 36 a 34n100 34 a i sm repetitive; 36n100 144 a pulse width limited by t jm 34n100 136 a v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v t j = 25 c 180 n s t j = 25 c 30 ns q rm t j = 25 c 2 c i rm 8 a ixfe 36n100 ixfe 34n100 isoplus-227 b please see ixfn36n100 data sheet for characteristic curves. notes: 1. pulse width limited by t jm. 2. pulse test, t 300 ms, duty cycle d 2%. 3. i t test current: ixfe36n100: i t = 18 a IXFE34N100: i t = 17 a
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